Deposition of PZT thin films with {001}, {110}, and {111} crystallographic orientations and their transverse piezoelectric characteristics
نویسندگان
چکیده
Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31 * of the films have been determined. The largest e31 * was found in {110}-oriented film. The differences observed in e31 * have been explained on the basis of domain wall contributions which are dependent on film texture. The influence of thin film texture on polarization switching characteristics have also been studied. Copyright © 2012 VBRI Press.
منابع مشابه
Growth and Properties of (001)-oriented Pb(Zr0.52Ti0.48)O3/LaNiO3 Films on Si(001) Substrates with TiN Buffer Layers
Pulsed laser deposition has been used to grow Pb(Zr0.52Ti0.48)O3 (PZT)/LaNiO3 (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO2-coated Si(001) substrates, using TiN buffer layers. The effect of background gas pressure on orientation of the thin films was investigated in detail. XRD analyses showed that under optimized conditions, (001)-oriented PZT/LN...
متن کاملCOMPOSITION DEPENDENCE OF MECHANICAL AND PIEZOELECTRIC PROPERTIES OF PULSED LASER DEPOSITED Pb(Zr,Ti)O3 THIN FILMS
In this contribution we present the compositional dependence of the longitudinal piezoelectric coefficient (d33,f), residual stress and Young’s modulus of Pb(Zrx,Ti1−x)O3 (PZT) thin films. Pulsed laser deposition (PLD) was used to deposit epitaxial PZT thin films with a < 110 > preferred orientation on silicon cantilevers. By using PLD, excellent piezoelectric properties of the PZT were observe...
متن کاملStrongly Enhanced Piezoelectric Response in Lead Zirconate Titanate Films with Vertically Aligned Columnar Grains
Pb(Zr0.52Ti0.48)O3 (PZT) films with (001) orientation were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using pulsed laser deposition. Variation of the laser pulse rate during the deposition of the PZT films was found to play a key role in the control of the microstructure and to change strongly the piezoelectric response of the thin film. The film deposited at low pulse rate has a denser co...
متن کاملVIBRATION ENERGY HARVESTERS OF LEAD-FREE (K,Na)NbO3 PIEZOELECTRIC THIN FILMS
In this study, we fabricated piezoelectric energy harvesters composed of lead-free (K,Na)NbO3 (KNN) thin films and compared the power generation performance with PZT-thin film energy harvesters. Both of the piezoelectric thin films were deposited on Pt/Ti/Si cantilevers by rf-sputtering. The KNN and PZT thin films had perovskite structure, and showed the relative dielectric constants of 744 and...
متن کاملControlling Piezoelectric Responses in Pb(Zr0.52Ti0.48)O3 Films through Deposition Conditions and Nanosheet Buffer Layers on Glass
Nanosheet Ca2Nb3O10 (CNOns) layers were deposited on ultralow expansion glass substrates by the Langmuir-Blodgett method to obtain preferential (001)-oriented growth of Pb(Zr0.52Ti0.48)O3 (PZT) thin films using pulsed laser deposition (PLD) to enhance the ferroelectric and piezoelectric properties of the films. The PLD deposition temperature and repetition frequency used for the deposition of t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012